| PART |
Description |
Maker |
| FBA09A12M FBA09A12L FBA09A12M1A FBA09A12H FBA09A12 |
Allowable Ambient Temperature Range
|
List of Unclassifed Manufacturers
List of Unclassifed Man...
|
| 2N5207 |
MAXIMUM ALLOWABLE RATINGS
MAXIMUM ALLOWABLE RATINGS
|
New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conduct...
|
| P4249-08 P3257 P3257-01 P3257-10 P3257-25 |
MCT photoconductive detector
|
Hamamatsu Photonics
HAMAMATSU[Hamamatsu Corporation]
|
| P274807 P5274-01 P3257-50 P2748-40 P2748-41 P2748- |
MCT photoconductive detector
|
Hamamatsu Corporation
|
| IP2030 |
30V MCT/IGBT Gate Driver(MOS???纭??浣??/缁????????浣???ㄩ┍?ㄥ?)
|
Intersil Corporation
|
| MCTV75P60E1 MCTA75P60E1 |
75A / 600V P-Type MOS Controlled Thyristor (MCT)
75A, 600V P-Type MOS Controlled Thyristor (MCT)
|
INTERSIL[Intersil Corporation]
|
| MCTG35P60F1 |
35A / 600V P-Type MOS Controlled Thyristor (MCT)
35A, 600V P-Type MOS Controlled Thyristor (MCT)
|
INTERSIL[Intersil Corporation]
|
| C4159 |
Low noise amplifier for InGaAs, PbS, PbSe and MCT detector
|
Hamamatsu Corporation
|
| C3757-02 C5185 |
Low noise amplifier for InGaAs, PbS, PbSe and MCT detector
|
Hamamatsu Corporation
|
| MCTV35P60F1D |
35A / 600V P-Type MOS Controlled Thyristor (MCT) with Anti-Parallel Diode
35A, 600V P-Type MOS Controlled Thyristor (MCT) with Anti-Parallel Diode
|
INTERSIL[Intersil Corporation]
|
